A.N. Volkova

Работ: 3

Ioffe Physicotechnical Institute RAS

1. Modification of the Silicon Carbide by Proton Irradiation

   Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

   СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000214

2. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000114

3. About the Nature of Recombination Current in 4H-SiC pn Structures

   Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000217