Работы, цитирующие эту работу

Работ: 5

Работа: Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

1. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.536303

2. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2020.article.000900

3. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400

4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   СтатьяSemiconductor materials and devices2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011220

5. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018