Работы, на которые ссылается эта работа

Работ: 5

Работа: 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

1. Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

   Anatoly M. Strel’chuk, N.S. Savkina, Alexey N. Kuznetsov +2

   Статья2002Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.413671

2. MBE growth and properties of SiC multi-quantum well structures

   A. Fissel, Ute Kaiser, Bernd Schröter +2

   Статья2001Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.566567

3. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2

   ABIABI:AkademIndex/openalex/2003.article.000117

4. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

   Robert S. Okojie, Ming Xhang, Pirouz Pirouz +3

   Статья2001Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.652876

5. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2003.article.000136