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Работы, на которые ссылается эта работа

Работ: 13

Работа: Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

  1. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials2001Цитирований: 5
    ABI

  2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4
    ABI

  3. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Статья2011Цитирований: 4
    ABI

  4. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3
    ABI

  5. Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer, Tibor Grasser, Ph. Roussel +6

    Статья2010Цитирований: 3
    ABI

  6. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

    Ivan A. Starkov, A. S. Starkov

    Статья2013Цитирований: 3
    ABI

  7. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

    J. Martín-Martínez, Simone Gerardin, E. Amat +5

    Статья2009Цитирований: 3
    ABI

  8. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

    Jihoon Seo, Gang-Jun Kim, Donghee Son +3

    Статья2016Цитирований: 3
    ABI

  9. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

    Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

    Статья2019Цитирований: 3
    ABI

  10. Analysis of hot-carrier-induced degradation mode on pMOSFET's

    F. Matsuoka, Hiroshi Iwai, H. Hayashida +3

    Статья1990Цитирований: 2
    ABI

  11. AC versus DC hot-carrier degradation in n-channel MOSFETs

    K. Mistry, Barry M. Doyle

    Статья1993Цитирований: 2
    ABI

  12. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2
    ABI

  13. Без названия

    ДругоеЦитирований: 1
    ABI