Работы, цитирующие эту работу

Работ: 8

Работа: Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

1. Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

   Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov +2

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.121943

2. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.290705

3. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001723

4. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

   Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002748

5. Properties of Single Crystal Silicon Doped with Vanadium

   Kh.S. Daliev, Zafarjon M. Khusanov

   СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002064

6. Influence of Doping Conditions on the Properties of Nickel Atom Clusters

   Kanatbay A. Ismailov, Zlikha M. Saparniyazova, Gulchekhra T. Kudeshova +2

   СтатьяMaterial Properties and ApplicationsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.589127

7. CVC Structure of PtSi - Si<Pt>-M in a Wide Range of Temperatures

   A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Tokhirjon U. Atamirzaev +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.004255

8. Study of the Thermoelectric Properties of Chrome Silicides

   A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Ismoil T. Bozarov +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.004256