Работы, цитирующие эту работу

Работ: 5

Работа: Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002753

2. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   СтатьяMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003016

3. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003062

4. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008623

5. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009031