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Работ: 18
Работа: Effect of Ba+-Ion Implantation on the Composition and Electronic Structure of Silicate Glasses
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21ABIConduction Mechanism in RuO2-Based Thick Films
К. Flachbart, V. Pavl�k, N. Toma?ovi?ov� +4
Статья1998Цитирований: 8ABIRuthenium clusters in lead-borosilicate glass in thick film resistors
Kenji Adachi, Sadahiro lida, Kazuhide Hayashi
Статья1994Цитирований: 6ABINew Insights into Physical Science Vol. 4
Kun-Lin Lin, Abdullah M. Al-Shaalan, Zhang Jihai +5
Книга2020Цитирований: 5ABIAn explanation of thermal behaviour of thick film strain gauges
Yulan Zheng, John Atkinson, Russell Sion
Статья2003Цитирований: 4ABIEffect of Glass Composition on the Electrical Properties of Thick‐Film Resistors
Статья2000Цитирований: 3ABITemperature dependence of thermopower in polar noncrystalline materials
O. A. Gudaev, V. K. Malinovskiǐ
Статья2002Цитирований: 2ABISemiconductors produced by doped oxide-glasses with Ir, Pd, Rh or Ru
Carl C. Sartain, W.D. Ryden, A. W. Lawson
Статья1970Цитирований: 2ABI