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Работы, на которые ссылается эта работа

Работ: 11

Работа: Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

  1. Single-layer MoS2 transistors

    Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2

    Статья2011Цитирований: 8
    ABI

  2. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
    ABI

  3. Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

    Matthew A. Panzer, Michael Shandalov, Jeremy Rowlette +4

    Статья2009Цитирований: 4
    ABI

  4. MOSFET scaling: Impact of two-dimensional channel materials

    R. Granzner, Zhansong Geng, W. Kinberger +1

    Статья2016Цитирований: 4
    ABI

  5. Channel Length Scaling of MoS<sub>2</sub> MOSFETs

    Han Liu, Adam T. Neal, Peide D. Ye

    Статья2012Цитирований: 3
    ABI

  6. Effect of temperature &amp; phonon scattering on the drain current of a MOSFET using SL-MoS2 as its channel material

    Sabyasachi Tiwari, Subhashish Dolai, Hafizur Rahaman +1

    Статья2017Цитирований: 3
    ABI

  7. Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

    Yao Guo, Xianlong Wei, Jiapei Shu +6

    Статья2015Цитирований: 2
    ABI

  8. Advances in MoS2-Based Field Effect Transistors (FETs)

    Xin Tong, Eric Ashalley, Feng Lin +2

    Обзорная статья2015Цитирований: 2
    ABI

  9. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

    A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

    СтатьяGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 2
    ABI

  10. Без названия

    ДругоеЦитирований: 1
    ABI

  11. Без названия

    ДругоеЦитирований: 1
    ABI