Работы, цитирующие эту работу

Работ: 5

Работа: The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

1. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3

   ABIABI:AkademIndex/openalex/2025.article.001173

2. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001352

3. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000556

4. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.002954

5. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.003469