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Работы, на которые ссылается эта работа

Работ: 22

Работа: Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

  1. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Статья1998Цитирований: 10
    ABI

  2. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Статья1974Цитирований: 9
    ABI

  3. Photoluminescence study of the surface modified and MEH-PPV coated cotton fibers

    A. S. Zakirov, Sh. U. Yuldashev, H.J. Wang +4

    СтатьяOrganic Electronics and PhotovoltaicsJournal of Luminescence2010Цитирований: 6
    ABI

  4. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    В. А. Козлов, Vitalii V. Kozlovski

    Статья2001Цитирований: 6
    ABI

  5. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 5
    ABI

  6. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3
    ABI

  7. Functional hybrid materials derived from natural cellulose

    A. S. Zakirov, Sh. U. Yuldashev, Hak Dong Cho +4

    СтатьяConducting polymers and applicationsJournal of the Korean Physical Society2012Цитирований: 3
    ABI

  8. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 3
    ABI

  9. Defective Structure of Silicon Doped with Dysprosium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev +3

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 3
    ABI

  10. Capacitance Transient Spectroscopy

    G. L. Miller, D. V. Lang, Lionel C. Kimerling

    Статья1977Цитирований: 3
    ABI

  11. First-principles study of radiation defects in silicon

    Vladislav Pelenitsyn, Pavel Korotaev

    Статья2022Цитирований: 3
    ABI

  12. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

    Ioana Pintilie, G. Lindstroem, Alexandra Junkes +1

    Статья2009Цитирований: 3
    ABI

  13. Morphology of the Surface of Silicon Doped with Lutetium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

    Статья2024Цитирований: 2
    ABI

  14. Study of Defect Structure of Silicon Doped with Dysprosium Using X-Ray Phase Analysis and Raman Spectroscopy

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +2

    Статья2024Цитирований: 2
    ABI

  15. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 2
    ABI

  16. Recent Progress in Silicon−Based Materials for Performance−Enhanced Lithium−Ion Batteries

    Xiangzhong Kong, Ziyang Xi, Linqing Wang +6

    Обзорная статья2023Цитирований: 2
    ABI

  17. Scanning Electron Microscopy and X-ray Microanalysis

    Joseph I. Goldstein, Dale E. Newbury, Patrick Echlin +5

    Книга2003Цитирований: 2
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI