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Работы, цитирующие эту работу

Работ: 21

Работа: On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

  1. Research for reduction material-capacity of load-lift cranes with multi-engine electric drives on the base electromagnetic work shaft systems

    Kudrat Abidov, K. Dadajanov, U. Absoatov +1

    СтатьяElectric Power Systems and ControlE3S Web of Conferences2023Цитирований: 22
    ABI

  2. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 8
    ABI

  3. Electron Spectroscopy of CdMeTe Nanostructures Created on CdTe Surface Under Ion Bombardment

    Y. S. Ergashov, Umirzakov Boltakhodja

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2020Цитирований: 8
    ABI

  4. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences2021Цитирований: 6
    ABI

  5. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  6. Formation of Nanoscale Structures on the Surface of MgO Films Upon Bombardment with Low-Energy Ions

    Д. А. Ташмухамедова, M. B. Yusupjanova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 3
    ABI

  7. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
    ABI

  8. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

    G. Kh. Allayarova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 2
    ABI

  9. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    СтатьяTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  10. Magnetic properties of soft magnetic composites used in electromechanical engineering

    Usan Berdiev, Utkirbek Sulaymonov, Dilsora Abduvalieva +2

    СтатьяElectric Motor Design and AnalysisE3S Web of Conferences2023Цитирований: 1
    ABI

  11. Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

    Elyor Bakhriddinovich Saitov

    СтатьяSilicon Nanostructures and PhotoluminescencePhysical Sciences and Technology2022Цитирований: 1
    ABI

  12. Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2021Цитирований: 0
    ABI

  13. Effect of Implantation of Ba+ Ions on the Composition, Electronic and Crystal Structure of W(111) and WO2 Surfaces

    Б. Е. Умирзаков, Д. А. Ташмухамедова, F. Ya. Khudaykulov

    СтатьяGas Sensing Nanomaterials and SensorsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0
    ABI

  14. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

    СтатьяIon-surface interactions and analysisЖурнал технической физики2022Цитирований: 0
    ABI

  15. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

    A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0
    ABI

  16. Advanced drainage of the sides of a coal mine by horizontal wells with a camouflage cavity

    B. Baymirzaev, U. Murodbekov, Z. Mamarajabova +1

    СтатьяGeotechnical and Geomechanical EngineeringE3S Web of Conferences2023Цитирований: 0
    ABI

  17. Representation of a mathematical model of chemical-technological processes with acceleration through a continuous function

    S. Fayzullaev, Nazimakhan Karimova, U. Fayzullaev +1

    СтатьяProcess Optimization and IntegrationE3S Web of Conferences2023Цитирований: 0
    ABI

  18. Effect of Ba+-Ion Implantation on the Composition and Electronic Structure of Silicate Glasses

    Д. А. Ташмухамедова, A. N. Urokov, G. Abdurakhmanov +1

    СтатьяGlass properties and applicationsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0
    ABI

  19. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

    S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0
    ABI

  20. Analysis of the Influence of Formation of Pd Silicides on Surface Layers of Si on the Diffusion of Atoms of Contacting Metal

    Д. А. Ташмухамедова, Kh.E. Abdiev, Soadat Gulyamova +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
    ABI

  21. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfaces2024Цитирований: 0
    ABI