Работы, цитирующие эту работу

Работ: 3

Работа: On the possibility of developing thermoelectric sensors based on multielement higher manganese silicide film structures

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Formation of Nanosized Films of Chromium Silicides on Silicon Surface

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +1

   ГлаваSemiconductor materials and interfacesLecture notes in networks and systems2021Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.401148

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   СтатьяSemiconductor materials and interfaces2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000312