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Работы, цитирующие эту работу

Работ: 11

Работа: Injection photodiode based on p-CdTe film

  1. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    СтатьяThermography and Photoacoustic TechniquesInorganic Materials2014Цитирований: 9
    ABI

  2. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  3. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesInorganic Materials2014Цитирований: 5
    ABI

  4. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
    ABI

  5. Fabrication and investigation of ultravialet Au-Zn x Cd1–x S-Mo-structures

    R. R. Kobulov, S. Yu. Gerasimenko, M. A. Maxmudov

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2017Цитирований: 2
    ABI

  6. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

    Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 1
    ABI

  7. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 1
    ABI

  8. Без названия

    A.K. Uteniyazov, A. Yu. Leyderman, R. A. Ayukhanov +25

    ДругоеAdvanced Semiconductor Detectors and MaterialsSemiconductor Physics Quantum Electronics & Optoelectronics2020Цитирований: 0
    ABI

  9. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    СтатьяIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering2021Цитирований: 0
    ABI

  10. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  11. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI