Работы, на которые ссылается эта работа

Работ: 9

Работа: Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

Injection photodiode based on an n-CdS/p-CdTe heterostructure
Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov
СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2013Цитирований: 19
ABI
Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов
СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
ABI
I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1
СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
ABI
Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure
Ш. А. Мирсагатов, I. B. Sapaev
СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
ABI
Characterization of CdTe thin films with different compositions obtained by CMBD for thin film solar cells
T.M. Razykov, К. M. Kuchkarov, Chris Ferekides +4
СтатьяChalcogenide Semiconductor Thin FilmsSolar Energy2017Цитирований: 4
ABI
Injection photodiode based on a p-Si-n-CdS-n +-CdS structure
Ш. А. Мирсагатов, I. B. Sapayev
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
ABI
Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells
Andrei Salavei, I. Rimmaudo, Fabio Piccinelli +1
Статья2012Цитирований: 3
ABI
High-performance ultraviolet photodetectors based on CdS/CdS:SnS<sub>2</sub>superlattice nanowires
Guangyang Gou, Guozhang Dai, Chuan Qian +8
Статья2016Цитирований: 2
ABI
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ДругоеЦитирований: 1
ABI