Работы, цитирующие эту работу

Работ: 4

Работа: Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

1. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

   С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

   СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 7

   ABIABI:AkademIndex/openalex/2024.article.000639

2. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

   С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.238423

3. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002944

4. Structural Features of Single-Crystal Silicon Doped with Copper

   S. Z. Zainabidinov, Sh. A. Makhmudov, A. K. Rafikov +3

   СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.018823