Работы, цитирующие эту работу

Работ: 3

Работа: The Diffusion Coefficient of Germanium in Silicon

1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8

   ABIABI:AkademIndex/openalex/2022.article.000429

2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.258448

3. Optical Properties of GexSi1 – x Binary Compounds in Silicon

   Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2023.article.002005