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Работы, цитирующие эту работу

Работ: 9

Работа: Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI

  2. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  3. Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers

    R. R. Kobulov, N. A. Matchanov, O. K. Ataboev +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2019Цитирований: 4
    ABI

  4. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    СтатьяSemiconductor materials and interfacesComputational nanotechnology2019Цитирований: 4
    ABI

  5. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3
    ABI

  6. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  7. Features of a ZnxCd1 – xS Buffer Layer for Use in Thin-Film Solar Cells in the Context of a Literature Review

    R. R. Kabulov

    Обзорная статьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2020Цитирований: 1
    ABI

  8. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

    Kh. M. Madaminov

    СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1
    ABI

  9. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    СтатьяSemiconductor Quantum Structures and Devices2022Цитирований: 1
    ABI