Работы, цитирующие эту работу

Работ: 3

Работа: The use of P-L-N structures in investigations of transient recombination from high injection levels in semiconductors

1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

   Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16

   ABIABI:AkademIndex/openalex/2026.other.200872

2. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

   Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

   СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2010Цитирований: 8

   ABIABI:AkademIndex/openalex/2010.article.000092

3. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

   Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.200868