Работы, цитирующие эту работу

Работ: 5

Работа: Polycrystalline Semiconductors II

1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

   Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16

   ABIABI:AkademIndex/openalex/2026.other.200872

2. Electrophysical properties of solar polycrystalline silicon and its n +-p structures at elevated temperatures

   B. M. Abdurakhmanov, L. O. Olimov, М. С. Саидов

   СтатьяThin-Film Transistor TechnologiesApplied Solar Energy2008Цитирований: 10

   ABIABI:AkademIndex/openalex/2026.other.329306

3. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

   L. O. Olimov

   СтатьяThin-Film Transistor TechnologiesSemiconductors2010Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.285234

4. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

   L. O. Olimov

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2012Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.285233

5. Effective interface density of electron states in semiconductor mixture films†

   С. Х. Шамирзаев, I. V. KHAMRAKULOV, V. M. Sviridov

   СтатьяThermodynamic and Structural Properties of Metals and AlloysInternational Journal of Electronics1995Цитирований: 0

   ABIABI:AkademIndex/openalex/1995.article.000147