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Работы, цитирующие эту работу

Работ: 12

Работа: On the theory of sublinear current-voltage characteristics of semiconductor structures

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
    ABI

  3. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2010Цитирований: 8
    ABI

  4. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  5. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  6. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI

  7. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
    ABI

  8. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1981Цитирований: 3
    ABI

  9. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2023Цитирований: 2
    ABI

  10. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)1982Цитирований: 0
    ABI

  11. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  12. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI