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Работы, на которые ссылается эта работа

Работ: 15

Работа: Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

  1. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Статья1958Цитирований: 26
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
    ABI

  3. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
    ABI

  4. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8
    ABI

  5. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  6. Без названия

    ДругоеЦитирований: 7
    ABI

  7. Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

    G. Bougnot, F. Delannoy, A. Foucaran +4

    Статья1988Цитирований: 4
    ABI

  8. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4
    ABI

  9. Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

    M. F. Fyhn, J. Lundsgaard Hansen, J. Chevallier +1

    Статья1999Цитирований: 3
    ABI

  10. Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systems

    Regina Ragan, Kyu Sung Min, Harry A. Atwater

    Статья2001Цитирований: 3
    ABI

  11. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI

  12. IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers

    S. P. Kozyrev

    Статья2009Цитирований: 3
    ABI

  13. The Application of Scanning Tunneling Microscopy to In Situ Studies of Nickel Electrodes under Potential Control

    Ovadia Lev, Fu‐Ren F. Fan, Allen J. Bard

    Статья1988Цитирований: 3
    ABI

  14. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

    R. Ginige, Brian Corbett, M. Modreanu +5

    Статья2006Цитирований: 2
    ABI

  15. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

    Kamesh Chilukuri, M. Mori, Carl L. Dohrman +1

    Статья2006Цитирований: 2
    ABI