Работы, на которые ссылается эта работа

Работ: 10

Работа: Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals

Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x
А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1
СтатьяChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics2001Цитирований: 25
ABI
Quantum dot heterostructures: Fabrication, properties, lasers (Review)
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin +3
Статья1998Цитирований: 8
ABI
Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs
L. G. Wang, Alex Zunger
Статья2003Цитирований: 7
ABI
Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices
H. H. Farrell, Randall A. LaViolette
Статья2004Цитирований: 3
ABI
MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures
Mitsuru Funato, Shizυo Fujita, Shigeo Fujita
Статья1995Цитирований: 2
ABI
Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures
D. H. Mosca, W. H. Schreiner, Edson Massayuki Kakuno +6
Статья2002Цитирований: 2
ABI
Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices
H. H. Farrell, Randall A. LaViolette
Статья2005Цитирований: 2
ABI
Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors
Maurice Glicksman, W. D. Kraeft
Статья1985Цитирований: 2
ABI
Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt
А. С. Саидов, A. Sh. Razzakov, Kurban Gaimnazarov
СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2001Цитирований: 2
ABI
Conductors crystallization—a condition for synthesizing new dopant compounds
М. С. Саидов
СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2010Цитирований: 1
ABI