Работы, цитирующие эту работу

Работ: 5

Работа: Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

1. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

   B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

   СтатьяMaterial Science and ThermodynamicsPhysical Sciences and Technology2023Цитирований: 7

   ABIABI:AkademIndex/openalex/2023.article.001205

2. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001804

3. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.001522

4. Ferromagnetic Properties of Silicon Doped Manganese Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

   СтатьяZnO doping and propertiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005445

5. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   СтатьяThermal properties of materialsAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009659