Работы, цитирующие эту работу

Работ: 4

Работа: A new approach in impurity doping of 4H-SiC using silicidation

1. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.390748

2. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

   I. G. Atabaev, Kh. N. Juraev

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.390749

3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy2018Цитирований: 1

   ABIABI:AkademIndex/openalex/2018.article.000197

4. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

   Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

   СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.470164