Работы, цитирующие эту работу

Работ: 4

Работа: Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

1. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.278129

2. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

   С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.238423

3. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

   S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

   СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2022.article.001009

4. On the Method of Calculation of the Photocurrent in Structures with Periodically Positioned Nanoinclusions

   R. A. Ayukhanov

   СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000964