Работы, цитирующие эту работу

Работ: 4

Работа: Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

1. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

   Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

   СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.393702

2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS_<i>x</i>Te1−x/<i>p</i>-CdTe heterostructure

   А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

   СтатьяChalcogenide Semiconductor Thin FilmsModern Physics Letters B2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.001297

3. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

   Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

   СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2014Цитирований: 3

   ABIABI:AkademIndex/openalex/2014.article.000132

4. The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure

   A. S. Achilov, R. R. Kabulov, O. A. Abdulkhaev +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsSurface Engineering and Applied Electrochemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010008