Работы, цитирующие эту работу

Работ: 6

Работа: IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

1. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

   Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

   СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.384840

2. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.001522

3. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002219

4. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

   M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

   СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.419058

5. Properties of “Higher Manganese Silicide-Silicon” Heterostructure

   Kobiljon K. ugli Kurbonaliev, Н. Ф. Зикриллаев, A. Zh. Khusanov

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.011308

6. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003073