Работы, цитирующие эту работу

Работ: 3

Работа: Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2

   ABIABI:AkademIndex/openalex/2003.article.000117

2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.381992

3. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2003.article.000136