Работы, цитирующие эту работу

Работ: 3

Работа: Localized epitaxial growth of MnSi1.7 on silicon

1. On the growth of higher manganese silicide films on silicon

   Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.199251

2. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626

3. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

   B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

   СтатьяSemiconductor materials and interfacesMaterials Today Communications2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000612