Работы, цитирующие эту работу

Работ: 3

Работа: Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD

1. Codiffusion of Gallium and Phosphorus Atoms in Silicon

   Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.419059

2. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002944

3. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002442