Работы, цитирующие эту работу

Работ: 3

Работа: Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

1. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

   С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.238420

2. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.392482

3. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

   Akramjon Y. Boboev

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.467189