Работы, цитирующие эту работу

Работ: 3

Работа: Neutron Transmutation Doping in Semiconductors

1. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

   Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

   СтатьяSemiconductor materials and interfacesSemiconductors1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000061

2. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

   Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000250

3. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

   Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000209