Работы, цитирующие эту работу

Работ: 2

Работа: Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism

1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.390741

2. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

   I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.390732