Работы, цитирующие эту работу

Работ: 5

Работа: Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

1. The synergetic phenomena in photoexcited semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1987Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.531306

2. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

   Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.200868

3. Recombination in semiconductors with deep impurities

   A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

   СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4

   ABIABI:AkademIndex/openalex/2008.article.000139

4. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

   A. Yu. Leĭderman

   СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.538374

5. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

   С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008697