Работы, цитирующие эту работу

Работ: 3

Работа: Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400

3. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   СтатьяSemiconductor materials and devices2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011220