Работы, цитирующие эту работу

Работ: 3

Работа: Theory of electronic structure evolution in GaAsN and GaPN alloys

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

   S. B. Donaev, Б. Е. Умирзаков

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.415746

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004233