Работы, цитирующие эту работу

Работ: 4

Работа: Electronic density of states at the interface between silicon and lead borosilicate glass

1. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

   С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

   СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2009Цитирований: 2

   ABIABI:AkademIndex/openalex/2009.article.000197

2. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

   П. Б. Парчинский, С. И. Власов, Aslan Nasirov

   СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1

   ABIABI:AkademIndex/openalex/2004.article.000159

3. The effect of γ radiation on the electrical properties of passive coatings based on lead borosilicate glasses

   П. Б. Парчинский

   СтатьяGlass properties and applicationsTechnical Physics Letters2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000144

4. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

   P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

   СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000305