Работы, цитирующие эту работу

Работ: 5

Работа: Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

1. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.536303

2. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

   A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

   СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570280

3. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

   Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

   СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570281

4. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.612723

5. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400