Работы, цитирующие эту работу

Работ: 3

Работа: Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000603

2. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.001438

3. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400