Работы, цитирующие эту работу

Работ: 2

Работа: Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing

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   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000180

2. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

   I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

   СтатьяSilicon Effects in AgricultureComputational Materials Science2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000363