Работы, цитирующие эту работу

Работ: 2

Работа: Spatial distribution of the luminescence in GaN thin films

1. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000110

2. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000218