Работы, цитирующие эту работу

Работ: 3

Работа: An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

1. Surface state density at the semiconductor-glass interface

   Aslan Nasirov

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2008Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.419525

2. ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

   Yusuke Mizokawa, Osamu Komoda, Tatsuro Miyasato +3

   СтатьяDiamond and Carbon-based Materials ResearchElectronics and Communications in Japan (Part II Electronics)1987Цитирований: 0

   ABIABI:AkademIndex/openalex/1987.article.000104

3. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400