Работы, цитирующие эту работу

Работ: 2

Работа: Properties of Sn-doped GaAs

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

   СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000114

2. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1990Цитирований: 0

   ABIABI:AkademIndex/openalex/1990.article.000080