Работы, цитирующие эту работу

Работ: 3

Работа: First-principles study of radiation defects in silicon

1. Investigations of the formation of nanosized objects in manganese implanted silicon single crystals by the methods of Raman scattering of light and atomic force microscopy

   Э. У. Арзикулов, F. Salakhitdinov, F Kholmurodov +1

   СтатьяIon-surface interactions and analysisJournal of Physics Conference Series2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.010504

2. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009030

3. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   СтатьяSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010369