Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseтез орадаЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

13 та иш

Иш: Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

  1. Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

    M. K. Herndon, Anju Gupta, V. Kaydanov +1

    Мақола199916 иқтибос
    ABI

  2. Double-injection currents in semiconductors

    É. I. Adirovich, P. M. Karageorgii-Alkalaev, A. Iu. Leiderman

    Мақола197814 иқтибос
    ABI

  3. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос
    ABI

  4. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Мақола197812 иқтибос
    ABI

  5. Optical Energy Gap of the Mixed Crystal CdS<sub><i>x</i></sub>Te<sub>1-<i>x</i></sub>

    Keiichi Ohata, Junji Saraie, Tetsuro Tanaka

    Мақола197310 иқтибос
    ABI

  6. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20109 иқтибос
    ABI

  7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20108 иқтибос
    ABI

  8. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    МақолаAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 иқтибос
    ABI

  9. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос
    ABI

  10. FUNDAMENTAL AND APPLIED PROBLEMS OF PHYSICS

    В. Г. Халтурин

    Мақола20067 иқтибос
    ABI

  11. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19766 иқтибос
    ABI

  12. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 иқтибос
    ABI

  13. Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

    А. С. Саидов, A. Yu. Leĭderman, Б. Сапаев +2

    Мақола19962 иқтибос
    ABI