Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseтез орадаЭкотизим учун очиқ API
Лотин
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201319 иқтибос
    ABI

  2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201516 иқтибос
    ABI

  3. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    МақолаMetal and Thin Film MechanicsTechnical Physics201315 иқтибос
    ABI

  4. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    МақолаIon-surface interactions and analysisTechnical Physics201513 иқтибос
    ABI

  5. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Мақола20136 иқтибос
    ABI

  6. Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier

    S. A. Masalov, A. V. Korotchenkov, V. P. Evtikhiev +1

    Мақола20152 иқтибос
    ABI

  7. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

    С. В. Тихов, О. Н. Горшков, M. N. Koryazhkina +2

    Мақола20162 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI