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Иш: Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос
    ABI

  2. Max Hansen and Kurt Anderko: Constitution of Binary Alloys. McGraw-Hill Book Co., New York, 1958, 1305頁, 23×16cm, \13.000.

    秀世 間庭

    Мақола19587 иқтибос
    ABI

  3. Classification of impurity voltaic effects in semiconductors and impurity voltaics

    М. С. Саидов

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20086 иқтибос
    ABI

  4. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  5. Сарлавҳасиз

    Бошқа3 иқтибос
    ABI

  6. Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell

    Shoji Nishida, Katsumi Nakagawa, Masaaki Iwane +4

    Мақола20012 иқтибос
    ABI

  7. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI