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11 та иш

Иш: Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Мақола20126 иқтибос
    ABI

  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  4. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  5. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Мақола20144 иқтибос
    ABI

  6. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос
    ABI

  7. Double-gate junctionless transistor model including short-channel effects

    Bruna Cardoso Paz, Fernando Avila Herrera, A. Cerdeira +1

    Мақола20152 иқтибос
    ABI

  8. Random telegraph-signal noise in junctionless transistors

    A. N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan +3

    Мақола20112 иқтибос
    ABI

  9. Performance optimization of nanoscale junctionless transistors through varying device design parameters for ultra-low power logic applications

    Debapriya Basu Roy, Abhijit Biswas

    Мақола20162 иқтибос
    ABI

  10. Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap

    Nivedita Jaiswal, Abhinav Kranti

    Мақола20182 иқтибос
    ABI

  11. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 иқтибос
    ABI