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Иш: SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY
The Diffusion Coefficient of Germanium in Silicon
M. Ogino, Yasuhisa Oana, M. Watanabe
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Yu.V. Pomozov, Mikhail G. Sosnin, Lyudmila I. Khirunenko +4
Мақола20002 иқтибосABI