Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002753

2. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   МақолаMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003016

3. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003062

4. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.008623

5. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009031